Infineon unveils 300mm power SiC wafer milestone
The gist
Infineon processed 300mm silicon carbide wafers into working power devices at its Villach, Austria fab.
Bigger wafers could mean more chips each, but yields and volume timing are undisclosed.
How it unfolded
- Oct 27, 2026Infineon announced an approximately €1.1bn investment in a high-volume 300mm GaN power semiconductor facility in Villach.
- Nov 9, 2026Infineon said it processed 300mm SiC wafers into functional power devices at its Villach fab, calling it the first such result in a full-scale fab environment.
- Nov 9, 2026Infineon said 300mm wafers offer 2.3 times more chips per wafer than 200mm wafers, and proofed its Cold Split wafer-separation technology with 300mm SiC in Dresden.
Key terms
- SiC
- A hard compound of silicon and carbon used as a wide-bandgap semiconductor and abrasive.
- wide-bandgap
- A semiconductor material with a band gap above about 2 electronvolts, larger than conventional semiconductors.
- GaN
- A hard III-V semiconductor with a wide band gap used in LEDs, lasers and high-power devices.
Source: Wikipedia